Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Datasheet | Package / Case | Supplier Device Package | Drain to Source Voltage (Vdss) | Speed | Power - Max | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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SBT250-10J | SANYO Semiconductor (U.S.A) Corporation |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 1 (Unlimited) | /files/sanyosemiconductorusacorporation-sbt25010j-datasheets-3487.pdf | TO-220-3 Full Pack | TO-220ML | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 300μA @ 50V | 800mV @ 9.5A | 25A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||
2SD1913S | SANYO Semiconductor (U.S.A) Corporation | $141.13 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/sanyosemiconductorusacorporation-2sd1913s-datasheets-1005.pdf | TO-220-3 Full Pack | TO-220ML | 2W | 60V | 3A | NPN | 140 @ 500mA 5V | 100MHz | 1V @ 200mA, 2A | ||||||||||||||||||||
FW231A-TL-E | SANYO Semiconductor (U.S.A) Corporation |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | /files/sanyosemiconductorusacorporation-fw231atle-datasheets-5913.pdf | 8-SOIC (0.173, 4.40mm Width) | 20V | 2.3W | 2 N-Channel (Dual) | 1530pF @ 10V | 23m Ω @ 8A, 4.5V | 8A | 21nC @ 4.5V | Logic Level Gate |
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