Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Voltage - Rated | Frequency | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Number of Drivers | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Max Output Current | Interface IC Type | Rise Time | Continuous Drain Current (ID) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | Application | DS Breakdown Voltage-Min | FET Technology | Speed | Power - Output | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Current Rating (Amps) | Reverse Current-Max | Reverse Test Voltage | Reverse Recovery Time | Diode Type | Number of Phases | Output Current-Max | Rise / Fall Time (Typ) | Channel Type | Drain Current-Max (Abs) (ID) | Drain to Source Resistance | Driven Configuration | Gate Type | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Voltage - DC Reverse (Vr) (Max) | Supplied Contents | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Transistor Type | Voltage - Test |
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DVRFD630-150/275 | IXYS-RF |
Min: 1 Mult: 1 |
download | MOSFET Driver | 1 (Unlimited) | 2013 | 10 Weeks | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXZH10N50L2B | IXYS-RF |
Min: 1 Mult: 1 |
download | Z-MOS™ | Tube | 1 (Unlimited) | 500V | 70MHz | ROHS3 Compliant | /files/ixysrf-ixzh10n50l2a-datasheets-9029.pdf | TO-247-3 | 10 Weeks | 17dB | TO-247 (IXFH) | 200W | 10A | N-Channel | 100V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXZ316N60 | IXYS-RF |
Min: 1 Mult: 1 |
download | Z-MOS™ | Tube | 1 (Unlimited) | 600V | 65MHz | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/ixysrf-ixz316n60-datasheets-2447.pdf | 6-SMD, Flat Lead Exposed Pad | 6 | 10 Weeks | yes | compliant | YES | DUAL | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | 23dB | Not Qualified | R-PDSO-F6 | SILICON | SINGLE | ISOLATED | SWITCHING | 600V | METAL-OXIDE SEMICONDUCTOR | 880W | 18A | 18A | N-Channel | 100V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
PRF-1150 | IXYS-RF |
Min: 1 Mult: 1 |
download | MOSFET Driver | 1 (Unlimited) | 13.56MHz | /files/ixysrf-prf1150-datasheets-3656.pdf | 10 Weeks | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXZR18N50A-00 | IXYS-RF |
Min: 1 Mult: 1 |
download | Z-MOS™ | Tube | 1 (Unlimited) | 500V | 65MHz | ROHS3 Compliant | /files/ixysrf-ixzr18n50a00-datasheets-9109.pdf | TO-247-3 | 10 Weeks | 23dB | 350W | 19A | N-Channel | 100V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
475-501N44A-00 | IXYS-RF |
Min: 1 Mult: 1 |
download | DE | Tube | 1 (Unlimited) | 500V | /files/ixysrf-475501n44a00-datasheets-2448.pdf | 6-SMD, Flat Lead Exposed Pad | DE475 | 1800W | 48A | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SS150TA60110 | IXYS-RF |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 1 (Unlimited) | /files/ixysrf-ss150ta60110-datasheets-3944.pdf | 6-SMD, Flat Lead Exposed Pad | 6 | EAR99 | PD-CASE | 8541.10.00.80 | YES | DUAL | 175°C | 3 | Rectifier Diodes | R-PDFP-F6 | ISOLATED | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 60W | 600V | 50μA | 0ns | Silicon Carbide Schottky | 1 | 10A | 600V | 50μA @ 600V | 1.8V @ 5A | 10A | -55°C~175°C | 3 Common Anode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXZR08N120A-00 | IXYS-RF |
Min: 1 Mult: 1 |
download | Z-MOS™ | Tube | 1 (Unlimited) | 1200V | 65MHz | /files/ixysrf-ixzr08n120a00-datasheets-9119.pdf | TO-247-3 | 10 Weeks | 23dB | PLUS247™-3 | 250W | 8A | N-Channel | 100V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXZR08N120 | IXYS-RF |
Min: 1 Mult: 1 |
download | Z-MOS™ | Tube | 1 (Unlimited) | 1200V | 65MHz | ENHANCEMENT MODE | RoHS Compliant | /files/ixysrf-ixzr08n120a00-datasheets-9119.pdf | TO-247-3 | 3 | 10 Weeks | yes | compliant | e1 | TIN SILVER COPPER | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | 23dB | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250W | 1200V | METAL-OXIDE SEMICONDUCTOR | 250W | 8A | 8A | N-Channel | 100V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IXRFD631-NRF | IXYS-RF |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | 2013 | /files/ixysrf-ixrfd631nrf-datasheets-0699.pdf | 6-SMD, Flat Lead Exposed Pad | 1 | 8V~18V | 4ns 4ns | Single | Low-Side | N-Channel, P-Channel MOSFET | 30A 30A | 0.8V 3.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SS150TI60110 | IXYS-RF |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 1 (Unlimited) | /files/ixysrf-ss150ta60110-datasheets-3944.pdf | 6-SMD, Flat Lead Exposed Pad | 6 | EAR99 | PD-CASE | 8541.10.00.80 | YES | DUAL | 175°C | 3 | Other Diodes | R-PDFP-F6 | ISOLATED | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 60W | 600V | 50μA | 600V | 0ns | Silicon Carbide Schottky | 1 | 10A | 600V | 50μA @ 600V | 1.8V @ 5A | 10A | -55°C~175°C | 3 Independent | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXZR08N120B-00 | IXYS-RF |
Min: 1 Mult: 1 |
download | Z-MOS™ | Tube | 1 (Unlimited) | 1200V | 65MHz | /files/ixysrf-ixzr08n120a00-datasheets-9119.pdf | TO-247-3 | 10 Weeks | 23dB | PLUS247™-3 | 250W | 8A | N-Channel | 100V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
475-102N20A-00 | IXYS-RF |
Min: 1 Mult: 1 |
download | DE | Tube | 1 (Unlimited) | 1000V | /files/ixysrf-475102n20a00-datasheets-2477.pdf | 6-SMD, Flat Lead Exposed Pad | 10 Weeks | DE475 | 1800W | 20A | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXRFD630 | IXYS-RF |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | 45MHz | Non-Inverting | ROHS3 Compliant | 2003 | 6-SMD, Flat Lead Exposed Pad | 6 Weeks | Unknown | 6 | 1 | yes | EAR99 | 8V~18V | NOT SPECIFIED | NOT SPECIFIED | 30A | BUFFER OR INVERTER BASED MOSFET DRIVER | 4ns 4ns | Single | Low-Side | N-Channel, P-Channel MOSFET | 30A 30A | 0.8V 3.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SS150TC60110 | IXYS-RF |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 1 (Unlimited) | /files/ixysrf-ss150ta60110-datasheets-3944.pdf | 6-SMD, Flat Lead Exposed Pad | 6 | EAR99 | PD-CASE | 8541.10.00.80 | YES | DUAL | 175°C | 3 | Rectifier Diodes | R-PDFP-F6 | ISOLATED | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 60W | 600V | 50μA | 0ns | Silicon Carbide Schottky | 1 | 10A | 600V | 50μA @ 600V | 1.8V @ 5A | 10A | -55°C~175°C | 3 Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXZR16N60 | IXYS-RF |
Min: 1 Mult: 1 |
download | Z-MOS™ | Tube | 1 (Unlimited) | 600V | 65MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixysrf-ixzr16n60-datasheets-1063.pdf | TO-247-3 | 3 | 10 Weeks | yes | e1 | TIN SILVER COPPER | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | 23dB | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 350W | 600V | METAL-OXIDE SEMICONDUCTOR | 350W | 18A | 18A | N-Channel | 100V | ||||||||||||||||||||||||||||||||||||||||||||||||||
275-201N25A-00 | IXYS-RF |
Min: 1 Mult: 1 |
download | DE | Tube | 1 (Unlimited) | 200V | /files/ixysrf-275201n25a00-datasheets-2484.pdf | 6-SMD, Flat Lead Exposed Pad | 590W | 25A | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXZ631DF18N50 | IXYS-RF |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | Non-Inverting | Non-RoHS Compliant | 2014 | 10-SMD, Flat Lead | 10 Weeks | 1 | yes | 8V~18V | 3.4ns 1.65ns | Single | Low-Side | N-Channel MOSFET | 95A 95A | 500V | 0.8V 3.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SS275TC12205 | IXYS-RF |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 1 (Unlimited) | /files/ixysrf-ss275tc12205-datasheets-4449.pdf | 6-SMD, Flat Lead Exposed Pad | 6 | EAR99 | PD-CASE | 8541.10.00.80 | YES | DUAL | 175°C | 3 | R-PDFP-F6 | ISOLATED | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 30W | 1200V | 200μA | 0ns | Silicon Carbide Schottky | 1 | 5A | 1200V | 200μA @ 1200V | 1.8V @ 5A | 5A | -55°C~175°C | 3 Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXZR18N50B-00 | IXYS-RF |
Min: 1 Mult: 1 |
download | Z-MOS™ | Tube | 1 (Unlimited) | 500V | 65MHz | ROHS3 Compliant | /files/ixysrf-ixzr18n50a00-datasheets-9109.pdf | TO-247-3 | 10 Weeks | 23dB | PLUS247™-3 | 350W | 19A | N-Channel | 100V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
150-102N02A-00 | IXYS-RF |
Min: 1 Mult: 1 |
download | DE | Tube | 1 (Unlimited) | 1000V | ROHS3 Compliant | /files/ixysrf-150102n02a00-datasheets-8377.pdf | 6-SMD, Flat Lead Exposed Pad | 10 Weeks | 200W | 2A | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXZ631DF12N100 | IXYS-RF |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | Non-Inverting | 2014 | 10-SMD, Flat Lead | 10 Weeks | 1 | yes | compliant | 8V~18V | BUFFER OR INVERTER BASED MOSFET DRIVER | 2.4ns 1.55ns | Single | Low-Side | N-Channel MOSFET | 72A 72A | 1000V | 0.8V 3.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SS275TA12205 | IXYS-RF |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 1 (Unlimited) | /files/ixysrf-ss275tc12205-datasheets-4449.pdf | 6-SMD, Flat Lead Exposed Pad | 6 | EAR99 | PD-CASE | 8541.10.00.80 | YES | DUAL | 175°C | 3 | R-PDFP-F6 | ISOLATED | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 30W | 1200V | 200μA | 0ns | Silicon Carbide Schottky | 1 | 5A | 1200V | 200μA @ 1200V | 1.8V @ 5A | 5A | -55°C~175°C | 3 Common Anode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXZ308N120 | IXYS-RF |
Min: 1 Mult: 1 |
download | Z-MOS™ | Tube | 1 (Unlimited) | 175°C | 1200V | 65MHz | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/ixysrf-ixz308n120-datasheets-2360.pdf | 6-SMD, Flat Lead Exposed Pad | 6 | 10 Weeks | No SVHC | 6 | yes | EAR99 | YES | 880W | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | 23dB | Not Qualified | 5ns | 8A | SILICON | SINGLE | ISOLATED | SWITCHING | 1.2kV | 1200V | METAL-OXIDE SEMICONDUCTOR | 8A | 2.1Ohm | N-Channel | 100V | |||||||||||||||||||||||||||||||||||||||||||||||||||
375-0001 | IXYS-RF |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXRFD615X2 | IXYS-RF |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C | Tube | 1 (Unlimited) | Non-Inverting | RoHS Compliant | 2015 | 8-SMD, Flat Lead | 10 Weeks | 2 | yes | compliant | 8V~18V | BUFFER OR INVERTER BASED MOSFET DRIVER | 4ns 4ns | Independent | Low-Side | N-Channel, P-Channel MOSFET | 15A 15A | 0.8V 3.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SS275TI12205 | IXYS-RF |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 1 (Unlimited) | /files/ixysrf-ss275tc12205-datasheets-4449.pdf | 6-SMD, Flat Lead Exposed Pad | 6 | EAR99 | PD-CASE | 8541.10.00.80 | YES | DUAL | 175°C | 3 | R-PDFP-F6 | ISOLATED | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 30W | 1200V | 200μA | 0ns | Silicon Carbide Schottky | 1 | 5A | 1200V | 200μA @ 1200V | 1.8V @ 5A | 5A | -55°C~175°C | 3 Independent | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
275X2-501N16A-00 | IXYS-RF |
Min: 1 Mult: 1 |
download | DE | Tube | 1 (Unlimited) | 500V | /files/ixysrf-275x2501n16a00-datasheets-2379.pdf | 8-SMD, Flat Lead Exposed Pad | 1180W | 16A | 2 N-Channel (Dual) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXZH16N60 | IXYS-RF |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 600V | /files/ixysrf-ixzh16n60-datasheets-5899.pdf | TO-247-3 | 350W | 1mA | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXRFD615 | IXYS-RF |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C | Tube | 1 (Unlimited) | Non-Inverting | RoHS Compliant | /files/ixysrf-ixrfd615-datasheets-2981.pdf | 6-SMD, Flat Leads | 1 | 8V~18V | 4ns 4ns | Single | Low-Side | N-Channel, P-Channel MOSFET | 15A 15A | 0.8V 3.5V |
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