IXYS(5222)

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Part Status Series Mount Mounting Type Operating Temperature Packaging Moisture Sensitivity Level (MSL) Termination Technology Operating Mode RoHS Status Published Datasheet Voltage - Rated DC Current Rating Package / Case Length Height Width Lead Free Number of Terminations Factory Lead Time Weight REACH SVHC Resistance Number of Pins Number of Drivers Pbfree Code ECCN Code Additional Feature Radiation Hardening Reach Compliance Code Nominal Supply Current JESD-609 Code Terminal Finish Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Pin Count Element Configuration Time@Peak Reflow Temperature-Max (s) Power Dissipation Number of Elements Subcategory Qualification Status JESD-30 Code Supplier Device Package Output Voltage Output Current Turn On Delay Time Rise Time Fall Time (Typ) Turn-Off Delay Time Continuous Drain Current (ID) Gate to Source Voltage (Vgs) Dual Supply Voltage Transistor Element Material Configuration Case Connection Transistor Application Drain to Source Voltage (Vdss) DS Breakdown Voltage-Min Threshold Voltage Power Dissipation-Max JEDEC-95 Code Reverse Recovery Time Pulsed Drain Current-Max (IDM) Drain-source On Resistance-Max Drain to Source Resistance Avalanche Energy Rating (Eas) Drain to Source Breakdown Voltage FET Type Input Capacitance (Ciss) (Max) @ Vds Nominal Vgs Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Current - Continuous Drain (Id) @ 25°C Gate Charge (Qg) (Max) @ Vgs FET Feature Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
IXFH11N80 IXFH11N80 IXYS
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download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2000 https://pdf.utmel.com/r/datasheets/ixys-ixfh13n80-datasheets-2163.pdf 800V 11A TO-247-3 Lead Free 3 950mOhm 3 yes AVALANCHE RATED No 3 Single 300W 1 FET General Purpose Power 33ns 32 ns 63 ns 11A 20V SILICON DRAIN SWITCHING 300W Tc 44A 800V N-Channel 4200pF @ 25V 950m Ω @ 500mA, 10V 4.5V @ 4mA 11A Tc 155nC @ 10V 10V ±20V
IXTH10N100D IXTH10N100D IXYS
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download Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2009 https://pdf.utmel.com/r/datasheets/ixys-ixth10n100d-datasheets-4365.pdf TO-247-3 3 yes e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED 3 Single NOT SPECIFIED 400W 1 FET General Purpose Power Not Qualified R-PSFM-T3 85ns 75 ns 110 ns 10A 30V SILICON DRAIN SWITCHING 1000V 400W Tc 20A 1kV N-Channel 2500pF @ 25V 1.4 Ω @ 10A, 10V 3.5V @ 250μA 10A Tc 130nC @ 10V Depletion Mode 10V ±30V
IXFQ23N60Q IXFQ23N60Q IXYS
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download Surface Mount Surface Mount Bulk 1 (Unlimited) MOSFET (Metal Oxide) ROHS3 Compliant 2017 TO-268-3, D3Pak (2 Leads + Tab), TO-268AA 23A 600V N-Channel 23A Tc
IXUV170N075S IXUV170N075S IXYS
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download Surface Mount Surface Mount Bulk 1 (Unlimited) MOSFET (Metal Oxide) ROHS3 Compliant PLUS-220SMD 220 300W Single 300W 175A 5.3mOhm 75V N-Channel 175A Tc
IXFT16N120P-TRL IXFT16N120P-TRL IXYS
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download Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) TO-268-3, D3Pak (2 Leads + Tab), TO-268AA 26 Weeks 1200V 660W Tc N-Channel 6900pF @ 25V 950m Ω @ 8A, 10V 6.5V @ 1mA 16A Tc 120nC @ 10V 10V ±30V
IXFR80N60P3 IXFR80N60P3 IXYS
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download HiPerFET™, Polar3™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ROHS3 Compliant 2011 https://pdf.utmel.com/r/datasheets/ixys-ixfr80n60p3-datasheets-4547.pdf TO-247-3 16.13mm 21.34mm 5.21mm 30 Weeks 247 Single FET General Purpose Power 48 ns 87 ns 48A 30V 600V 540W Tc N-Channel 13100pF @ 25V 76m Ω @ 40A, 10V 5V @ 8mA 48A Tc 190nC @ 10V 10V ±30V
IXFK44N50 IXFK44N50 IXYS
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download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube Not Applicable MOSFET (Metal Oxide) ENHANCEMENT MODE Non-RoHS Compliant 2002 https://pdf.utmel.com/r/datasheets/ixys-ixfk44n50-datasheets-7596.pdf 500V 44A TO-264-3, TO-264AA 3 3 yes AVALANCHE RATED e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED 3 Single NOT SPECIFIED 500W 1 FET General Purpose Power Not Qualified 60ns 30 ns 100 ns 44A 20V SILICON DRAIN SWITCHING 500W Tc 176A 0.12Ohm 500V N-Channel 8400pF @ 25V 120m Ω @ 22A, 10V 4V @ 8mA 44A Tc 270nC @ 10V 10V ±20V
IXTA102N15T IXTA102N15T IXYS $4.19
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download Surface Mount Surface Mount -55°C~175°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2008 https://pdf.utmel.com/r/datasheets/ixys-ixta102n15t-datasheets-9411.pdf TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 2 30 Weeks yes EAR99 AVALANCHE RATED unknown e3 PURE TIN GULL WING NOT SPECIFIED 4 Single NOT SPECIFIED 455W 1 FET General Purpose Power Not Qualified R-PSSO-G2 14ns 22 ns 25 ns 102A 20V SILICON DRAIN SWITCHING 455W Tc 300A 0.018Ohm 750 mJ 150V N-Channel 5220pF @ 25V 18m Ω @ 500mA, 10V 5V @ 1mA 102A Tc 87nC @ 10V 10V ±20V
IXTH74N15T IXTH74N15T IXYS
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download Through Hole Through Hole Tube 1 (Unlimited) MOSFET (Metal Oxide) ROHS3 Compliant TO-247-3 74A 150V N-Channel 74A Tc
IXFA16N50P3 IXFA16N50P3 IXYS
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download HiPerFET™, Polar3™ Surface Mount Surface Mount -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2013 https://pdf.utmel.com/r/datasheets/ixys-ixfp16n50p3-datasheets-3145.pdf TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 3 30 Weeks AVALANCHE RATED not_compliant e3 Matte Tin (Sn) SINGLE THROUGH-HOLE 1 FET General Purpose Power R-PSFM-T3 16A SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING 500V 500V 330W Tc TO-220AB 40A 0.36Ohm 300 mJ N-Channel 1515pF @ 25V 360m Ω @ 8A, 10V 5V @ 2.5mA 16A Tc 29nC @ 10V 10V ±30V
IXFA34N65X2-TRL IXFA34N65X2-TRL IXYS
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download Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 19 Weeks 650V 540W Tc N-Channel 3230pF @ 25V 100m Ω @ 17A, 10V 5V @ 2.5mA 34A Tc 56nC @ 10V 10V ±30V
IXFA76N15T2 IXFA76N15T2 IXYS
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download HiPerFET™, TrenchT2™ Surface Mount Surface Mount -55°C~175°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2015 https://pdf.utmel.com/r/datasheets/ixys-ixfp76n15t2-datasheets-5436.pdf TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 2 30 Weeks yes EAR99 AVALANCHE RATED not_compliant e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED 3 NOT SPECIFIED 1 FET General Purpose Power Not Qualified R-PSSO-G2 76A SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING 150V 150V 350W Tc TO-263AA 200A 0.02Ohm 500 mJ N-Channel 5800pF @ 25V 20m Ω @ 38A, 10V 4.5V @ 250μA 76A Tc 97nC @ 10V 10V ±20V
IXFA44N25X3 IXFA44N25X3 IXYS
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download Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 19 Weeks compliant 250V 240W Tc N-Channel 2200pF @ 25V 40m Ω @ 22A, 10V 4.5V @ 1mA 44A Tc 33nC @ 10V 10V ±20V
IXFH14N60P3 IXFH14N60P3 IXYS
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download HiPerFET™, Polar3™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2011 https://pdf.utmel.com/r/datasheets/ixys-ixfh14n60p3-datasheets-0202.pdf TO-247-3 16.26mm 21.46mm 5.3mm 3 24 Weeks 3 AVALANCHE RATED 3 Single 1 FET General Purpose Power 21 ns 43 ns 14A 30V SILICON DRAIN SWITCHING 600V 600V 327W Tc TO-247AD 0.54Ohm 700 mJ N-Channel 1480pF @ 25V 540m Ω @ 7A, 10V 5V @ 1mA 14A Tc 25nC @ 10V 10V ±30V
IXFP102N15T IXFP102N15T IXYS
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download HiPerFET™ Through Hole Through Hole -55°C~175°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2009 /files/ixys-ixfa102n15t-datasheets-0109.pdf TO-220-3 3 26 Weeks yes EAR99 AVALANCHE RATED e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE NOT SPECIFIED 3 NOT SPECIFIED 1 FET General Purpose Power Not Qualified R-PSFM-T3 102A SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING 150V 150V 455W Tc TO-220AB 300A 0.018Ohm 750 mJ N-Channel 5220pF @ 25V 18m Ω @ 500mA, 10V 5V @ 1mA 102A Tc 87nC @ 10V 10V ±20V
IXFA72N30X3-TRL IXFA72N30X3-TRL IXYS
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download Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 19 Weeks 300V 390W Tc N-Channel 5400pF @ 25V 19m Ω @ 36A, 10V 4.5V @ 1.5mA 72A Tc 82nC @ 10V 10V ±20V
IXFP30N60X IXFP30N60X IXYS
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download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ROHS3 Compliant 2015 https://pdf.utmel.com/r/datasheets/ixys-ixfp30n60x-datasheets-0441.pdf TO-220-3 19 Weeks 30A 600V 500W Tc N-Channel 2270pF @ 25V 155m Ω @ 15A, 10V 4.5V @ 4mA 30A Tc 56nC @ 10V 10V ±30V
IXTQ26P20P IXTQ26P20P IXYS
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download PolarP™ Through Hole Through Hole -55°C~175°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2007 https://pdf.utmel.com/r/datasheets/ixys-ixtp26p20p-datasheets-1592.pdf TO-3P-3, SC-65-3 3 24 Weeks yes EAR99 AVALANCHE RATED unknown e3 PURE TIN NOT SPECIFIED 3 Single NOT SPECIFIED 300W 1 Other Transistors Not Qualified R-PSFM-T3 33ns 21 ns 46 ns 26A 20V SILICON DRAIN SWITCHING 200V 300W Tc 70A 0.17Ohm 1500 mJ -200V P-Channel 2740pF @ 25V 170m Ω @ 13A, 10V 4V @ 250μA 26A Tc 56nC @ 10V 10V ±20V
IXTQ72N30T IXTQ72N30T IXYS
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download Through Hole Through Hole Tube 1 (Unlimited) MOSFET (Metal Oxide) ROHS3 Compliant TO-3P-3, SC-65-3 TO-3P 72A 300V N-Channel 72A Tc
IXFH80N65X2-4 IXFH80N65X2-4 IXYS $14.03
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download HiPerFET™ Through Hole -55°C~150°C TJ Tube Not Applicable MOSFET (Metal Oxide) https://pdf.utmel.com/r/datasheets/ixys-ixfh80n65x24-datasheets-0591.pdf TO-247-4 19 Weeks compliant 650V 890W Tc N-Channel 8300pF @ 25V 38m Ω @ 500mA, 10V 5V @ 4mA 80A Tc 140nC @ 10V 10V ±30V
IXFR4N100Q IXFR4N100Q IXYS
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download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Bulk 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2002 https://pdf.utmel.com/r/datasheets/ixys-ixfr4n100q-datasheets-0626.pdf ISOPLUS247™ 3 36 Weeks 3 yes AVALANCHE RATED e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED 3 Single NOT SPECIFIED 80W 1 Not Qualified 15ns 18 ns 32 ns 3.5A 20V SILICON ISOLATED SWITCHING 1000V 80W Tc 16A 3Ohm 700 mJ 1kV N-Channel 1050pF @ 25V 3 Ω @ 2A, 10V 5V @ 1.5mA 3.5A Tc 39nC @ 10V 10V ±20V
IXTX170P10P IXTX170P10P IXYS
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download PolarP™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2009 https://pdf.utmel.com/r/datasheets/ixys-ixtx170p10p-datasheets-0670.pdf TO-247-3 3 28 Weeks 247 yes EAR99 AVALANCHE RATED unknown e1 TIN SILVER COPPER SINGLE NOT SPECIFIED 3 NOT SPECIFIED 890W 1 Other Transistors Not Qualified R-PSIP-T3 170A 20V SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING 100V 890W Tc 510A 0.012Ohm 3500 mJ -100V P-Channel 12600pF @ 25V 12m Ω @ 500mA, 10V 4V @ 1mA 170A Tc 240nC @ 10V 10V ±20V
IXTK550N055T2 IXTK550N055T2 IXYS
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download FRFET®, SupreMOS® Through Hole Through Hole -55°C~175°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2009 https://pdf.utmel.com/r/datasheets/ixys-ixtk550n055t2-datasheets-0709.pdf TO-264-3, TO-264AA 3 28 Weeks 1 yes EAR99 AVALANCHE RATED unknown 200A e1 TIN SILVER COPPER SINGLE NOT SPECIFIED 3 NOT SPECIFIED 1 FET General Purpose Power Not Qualified R-PSFM-T3 55V 550A 45 ns 40ns 230 ns 90 ns 550A SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING 1250W Tc 3000 mJ N-Channel 40000pF @ 25V 1.6m Ω @ 100A, 10V 4V @ 250μA 550A Tc 595nC @ 10V 10V ±20V
FMD40-06KC FMD40-06KC IXYS
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download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2008 https://pdf.utmel.com/r/datasheets/ixys-fmd4006kc-datasheets-0754.pdf i4-Pac™-5 5 32 Weeks 5 yes HIGH RELIABILITY e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED 5 Single NOT SPECIFIED 280W 1 FET General Purpose Power Not Qualified 30ns 10 ns 110 ns 38A 20V SILICON ISOLATED SWITCHING 0.07Ohm 600V N-Channel 70m Ω @ 20A, 10V 3.9V @ 2.7mA 38A Tc 250nC @ 10V Super Junction 10V ±20V
IXFX20N120 IXFX20N120 IXYS
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download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) Through Hole MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2003 https://pdf.utmel.com/r/datasheets/ixys-ixfx20n120-datasheets-0789.pdf TO-247-3 Lead Free 3 6g No SVHC 750mOhm 3 yes EAR99 No e1 Tin/Silver/Copper (Sn/Ag/Cu) 3 Single 780W 1 45ns 20 ns 75 ns 20A 30V 1.2kV SILICON DRAIN SWITCHING 1200V 4.5V 780W Tc 300 ns 80A 2000 mJ 1.2kV N-Channel 7400pF @ 25V 4.5 V 750m Ω @ 500mA, 10V 4.5V @ 8mA 20A Tc 160nC @ 10V 10V ±30V
FMD47-06KC5 FMD47-06KC5 IXYS
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download CoolMOS™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2009 https://pdf.utmel.com/r/datasheets/ixys-fmd4706kc5-datasheets-0824.pdf ISOPLUSi5-Pak™ 5 32 Weeks 5 yes UL RECOGNIZED, AVALANCHE RATED e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE NOT SPECIFIED 5 NOT SPECIFIED 1 FET General Purpose Power Not Qualified 47A SILICON SINGLE WITH BUILT-IN DIODE ISOLATED SWITCHING 600V 600V N-Channel 6800pF @ 100V 45m Ω @ 44A, 10V 3.5V @ 3mA 47A Tc 190nC @ 10V 10V ±20V
IXFR27N80Q IXFR27N80Q IXYS
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download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2000 https://pdf.utmel.com/r/datasheets/ixys-ixfr27n80q-datasheets-0859.pdf ISOPLUS247™ 3 3 yes AVALANCHE RATED e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED 3 Single NOT SPECIFIED 500W 1 Not Qualified 28ns 13 ns 50 ns 27A 20V SILICON ISOLATED SWITCHING 500W Tc 108A 2500 mJ 800V N-Channel 7600pF @ 25V 300m Ω @ 13.5A, 10V 4.5V @ 4mA 27A Tc 170nC @ 10V 10V ±20V
IXFK48N60Q3 IXFK48N60Q3 IXYS
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download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2011 https://pdf.utmel.com/r/datasheets/ixys-ixfx48n60q3-datasheets-3687.pdf TO-264-3, TO-264AA 19.96mm 26.16mm 5.13mm 3 30 Weeks 3 AVALANCHE RATED unknown 3 Single 1kW 1 FET General Purpose Power 37 ns 300ns 40 ns 48A 30V SILICON DRAIN SWITCHING 1000W Tc 120A 0.14Ohm 2000 mJ 600V N-Channel 7020pF @ 25V 140m Ω @ 24A, 10V 6.5V @ 4mA 48A Tc 140nC @ 10V 10V ±30V
IXFR12N100Q IXFR12N100Q IXYS $2.81
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download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2002 https://pdf.utmel.com/r/datasheets/ixys-ixfr12n100q-datasheets-0945.pdf ISOPLUS247™ 3 3 yes AVALANCHE RATED e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED 3 Single NOT SPECIFIED 250W 1 FET General Purpose Power Not Qualified 23ns 15 ns 40 ns 10A 20V SILICON ISOLATED SWITCHING 1000V 250W Tc 48A 1kV N-Channel 2900pF @ 25V 1.1 Ω @ 6A, 10V 5.5V @ 4mA 10A Tc 90nC @ 10V 10V ±20V
IXFL44N60 IXFL44N60 IXYS
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download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2003 https://pdf.utmel.com/r/datasheets/ixys-ixfl44n60-datasheets-0989.pdf ISOPLUS264™ 20.29mm 26.42mm 5.21mm 3 264 yes AVALANCHE RATED e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED 3 Single NOT SPECIFIED 500W 1 Not Qualified R-PSIP-T3 42 ns 55ns 45 ns 110 ns 41A 20V SILICON ISOLATED SWITCHING 500W Tc 176A 0.13Ohm 3000 mJ 600V N-Channel 8900pF @ 25V 130m Ω @ 22A, 10V 4.5V @ 8mA 41A Tc 330nC @ 10V 10V ±20V

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