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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Operating Mode | RoHS Status | Number of Terminations | ECCN Code | Additional Feature | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | DS Breakdown Voltage-Min | FET Technology | Highest Frequency Band |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PTF10043 | Ericsson |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | Non-RoHS Compliant | 2 | EAR99 | HIGH RELIABILITY | YES | DUAL | FLAT | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-CDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 55W | 65V | METAL-OXIDE SEMICONDUCTOR | L B | |||||||
| PTF10153 | Ericsson |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | Non-RoHS Compliant | 2 | EAR99 | HIGH RELIABILITY | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | FLAT | NOT SPECIFIED | 2 | 200°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-CDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 237W | 65V | METAL-OXIDE SEMICONDUCTOR | L B |
